Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsBTS432E2-E3062A, MOSFET ProFET typ. 11A >60V

PROFET

BTS 432 E2

Data Sheet 1 of 14 2010-Jan-26

Smart Highside Power Switch

Features

•

Load dump and reverse battery protection

)

•

Clamp of negative voltage at output

•

Short-circuit protection

•

Current limitation

•

Thermal shutdown

•

Diagnostic feedback

•

Open load detection in ON-state

•

CMOS compatible input

•

Electrostatic discharge (ESD) protection

•

Loss of ground and loss of V

protection

•

Overvoltage protection

•

Undervoltage and overvoltage shutdown with auto-

restart and hysteresis

•

Green Product (RoHS compliant)

•

AEC qualified

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS



chip on chip technology. Providing protective functions.

+ V

Signal GND

ESD

PROFET



OUT

GND

Logic

Voltage

sensor

Voltage

source

Open load

detection

Short circuit

detection

Charge pump

Level shifter

Temperature

sensor

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

Load GND

Load

Logic

Overvoltage

protection

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Product Summary

Load dump

80 V

-V

OUT

Avalanche Clamp 58 V

bb (operation)

4.5 ... 42 V

bb (reverse)

-32 V

mΩ

L(SCp)

44 A

L(SCr)

35 A

L(ISO)

11 A

PG-TO220-5-11 PG-TO263-5-2

Standard

SMD

Summary of content (14 pages)

PAGE 1
PROFET® BTS 432 E2 Smart Highside Power Switch Product Summary VLoad dump 80 Vbb-VOUT Avalanche Clamp 58 Vbb (operation) 4.5 ...
PAGE 2
PROFET® BTS 432 E2 Pin Symbol Function 1 GND Logic ground 2 IN Input, activates the power switch in case of logical high signal 3 Vbb Positive power supply voltage, the tab is shorted to this pin 4 ST Diagnostic feedback, low on failure 5 OUT (Load, L) Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 Ω, RL= 1.
PAGE 3
PROFET® BTS 432 E2 Electrical Characteristics Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C: RON -- 30 38 mΩ IL(ISO) 9 55 11 70 -- A IL(GNDhigh) -- -- 1 mA ton toff 50 10 160 -- 300 80 µs dV /dton 0.4 -- 2.5 V/µs -dV/dtoff 1 -- 5 V/µs Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) 4.5 2.4 --- ---6.5 42 4.5 4.5 7.
PAGE 4
PROFET® BTS 432 E2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions8) Initial peak short circuit current limit (pin 3 to 5)9), IL(SCp) ( max 400 µs if VON > VON(SC) ) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..
PAGE 5
PROFET® BTS 432 E2 Parameter and Conditions Symbol Values min typ max VIN(T+) 1.5 -- 2.4 V VIN(T-) 1.0 -- -- V -1 0.5 -- -30 V µA 10 25 50 µA 80 200 400 µs td(ST) 350 -- 1600 µs VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V at Tj = 25 °C, Vbb = 12 V unless otherwise specified Input and Status Feedback12) Input turn-on threshold voltage Unit Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..
PAGE 6
PROFET® BTS 432 E2 Truth Table Input- Output Status Level level 432E2 Normal operation Open load L H L H L H H H H L Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L H L H L H L H L H 13) H L L H H L L L L L L H L H H (L14) L L H H H H L = "Low" Level H = "High" Level Terms Input circuit (ESD protection) Ibb I IN 2 V 13) 14) IN VST bb IN Vbb IN IL PROFET I ST V R 3 4 OUT I ESDZDI1 ZDI2 VON 5 I I GND ST GND 1 R IGND ZDI1 6.1 V typ.
PAGE 7
PROFET® BTS 432 E2 Status output Overvolt. and reverse batt. protection +5V R ST(ON) GND + V bb V ST R IN R bb Z IN Logic ESDZD V R ST ST PROFET GND ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not designed for continuous current OUT R GND Signal GND Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection Short Circuit detection Fault Condition: VON > 8.3 V typ.
PAGE 8
PROFET® BTS 432 E2 GND disconnect with GND pull up 3 3 2 IN Vbb high 2 PROFET 4 OUT IN PROFET 5 ST 4 GND V bb V IN ST OUT 5 ST GND 1 1 V Vbb V V GND bb Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
PAGE 9
PROFET® BTS 432 E2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432E2 Overtemperature protection Tj >150 °C, latch function15)16) Tj >150 °C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.15) (when first turned on after approx. 200 µs) E X X Open load detection in OFF-state with sensing current 30 µA typ.
PAGE 10
PROFET® BTS 432 E2 Timing diagrams Figure 2b: Switching an inductive load Figure 1a: Vbb turn on: IN V bb IN t d(bb IN) td(ST) ST *) V V OUT OUT A I ST open drain L IL(OL) t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs Figure 2a: Switching a lamp, *) if the time constant of load is too large, open-load-status may occur Figure 3a: Turn on into short circuit, IN IN ST ST V V OUT OUT td(SC) I I L L t t td(SC) approx.
PAGE 11
PROFET® BTS 432 E2 Figure 4a: Overtemperature: Reset if Tj
PAGE 12
PROFET® BTS 432 E2 Figure 6b: Undervoltage restart of charge pump Figure 5b: Open load: detection in ON-state, open load occurs in on-state VON [V] VON(CL) V on IN off td(ST OL1) t d(OL ST2) ST V V OUT off V V bb(u rst) I normal open L normal V V bb(o rst) bb(u cp) bb(under) t bb(over) on V bb Vbb [V] td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ.
PAGE 13
PROFET® BTS 432 E2 Package and Ordering Code All dimensions in mm PG-TO220-5-11 SMD PG-TO263-5-2 BTS 432 E2 BTS432E2 E3062A 4.4 10 ±0.2 3.7 ±0.3 5 x 0.8 ±0.1 1) 3.9 ±0.4 M A C B 0.05 2.4 0.1 4.7 ±0.5 9.25 ±0.2 9.25 ±0.2 0...0.15 0.25 A 8.5 1) 0...0.15 C 0.5 ±0.1 4 x 1.7 (15) 2.8 ±0.2 8.6 ±0.3 0.05 2.4 1.6 ±0.3 1 ±0.3 1.27 ±0.1 10.2 ±0.3 1) 12.95 17 ±0.3 15.65 ±0.3 0...0.3 1.27 ±0.1 0...0.3 4.4 1.3 ±0.3 8.5 1) 3.7 -0.15 2.7 ±0.3 A 7.55 1) 10 ±0.2 9.9 ±0.2 5 x 0.
PAGE 14
PROFET® BTS 432 E2 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.