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Data Sheet BTS50055-1TMC

Infineon Technologies AG Page 1of 17 2010-April-27

Smart Highside High Current Power Switch

Reversave

•

Reverse battery protection by self turn on of

power MOSFET

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Overtemperature protection

•

Overvoltage protection (including load dump)

•

Clamp of negative voltage at output

•

Fast deenergizing of inductive loads

)

•

Low ohmic inverse current operation

•

Diagnostic feedback with load current sense

•

Open load detection via current sense

•

Loss of V

protection

)

•

Electrostatic discharge (ESD) protection

•

Green product (RoHS compliant)

•

AEC qualified

Application

•

Power switch with current sense diagnostic

feedback for 12

V DC grounded loads

•

Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS



chip on chip technology. Providing embedded protective functions.

Charge pump

Level shifter

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

Overvoltage

protection

+ V

PROFET



OUT

4 & Tab

1,2,6,7

Load GND

Load

Output

Voltage

detection

Logic GND

Voltage

sensor

Voltage

source

Current

Sense

Logic

ESD

Temperature

sensor

) With additional external diode.

)

Additional external diode required for energized inductive loads (see page 8).

Product Summary

Operating voltage

bb(on)

5.0 ... 34 V

On-state resistance R

6.0

mΩ

Noinal current I

L(nom)

17 A

Load current (ISO) I

L(ISO)

70 A

Short circuit current limitation I

L(SC)

130 A

Current sense ratio I

14 000

PG-TO220-7-4

SM D

Summary of content (17 pages)

PAGE 1
Data Sheet BTS50055-1TMC Smart Highside High Current Power Switch Product Summary Operating voltage On-state resistance Noinal current Load current (ISO) Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deenergizing of inductive lo
PAGE 2
Data Sheet BTS50055-1TMC Pin Symbol Function 1 OUT O Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) 2 OUT O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications!3) 3 IN I Input, activates the power switch in case of short to ground 4 Vbb + Positive power supply voltage, the tab is electrically connected to this pin.
PAGE 3
Data Sheet BTS50055-1TMC Thermal Characteristics Parameter and Conditions Thermal resistance Symbol 7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB8): min --- Values typ max -- 0.75 60 -33 Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = -40 ...
PAGE 4
Data Sheet BTS50055-1TMC Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 °C: RON(inv) see page 9 Tj = 150 °C: IL(inv) Nominal inverse load current (Pins 1,2,6,7 to Tab) ) VON = -0.5 V, Tc = 85 °C11 -VON Drain-source diode voltage (Vout > Vbb) IL = - 20 A, IIN = 0, Tj = +150°C Values min typ max -- Unit 6.0 10.5 -- mΩ 55 4.4 7.9 70 -- 0.
PAGE 5
Data Sheet BTS50055-1TMC Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Protection Functions16) Short circuit current limit (Tab to pins 1,2,6,7)17) VON = 6 V Tc =-40°C: Tc =25°C: Tc =+150°C: 18) Output clamp IL= 40 mA: (inductive load switch off) IL(SC) IL(SC) IL(SC) -VOUT(CL) Values min typ max Unit -45 -14 110 130 115 17 -180 -20 A 39 150 -- 42 -10 47 --- V °C K -- -- 32 V -- 5.4 8.9 7.0 12.
PAGE 6
Data Sheet BTS50055-1TMC Parameter and Conditions Symbol Values min typ max IIS,lim 6.5 -- IIN = 0: IIS(LL) -- -- VIN = 0, IL ≤ 0: IIS(LH) Current sense overvoltage protection Tj =-40°C: VbIS(Z) Ibb = 15 mA Tj = 25...+150°C: 21) Current sense settling time ts(IS) -60 62 -- 2 -66 -- ---500 µs Input Input and operating current (see diagram page 12) IIN(on) -- 0.8 1.5 mA -- -- 80 µA at Tj = -40 ...
PAGE 7
Data Sheet BTS50055-1TMC Terms Current sense status output I bb 4 VbIN Vbb VON Vbb R bb V IL V 3 bb IN RIN V OUT PROFET I IN IS 1,2,6,7 IIS IS 5 IN VbIS V IS R I IS VOUT DS R IS Two or more devices can easily be connected in parallel to increase load current capability. Input circuit (ESD protection) V bb ZD V Z,IS ZD VIS IS VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n devices are connected in parallel).
PAGE 8
Data Sheet BTS50055-1TMC Overvoltage protection of logic part + Vbb V R IN Z,IN V IN Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. R bb Z,IS Vbb disconnect with energized inductive load Logic V OUT Version a: PROFET IS V R IS bb V V Z,VIS RV IN bb PROFET Signal GND Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ.
PAGE 9
Data Sheet BTS50055-1TMC Maximum allowable load inductance for a single switch off Inverse load current operation L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [µH] Vbb V bb IL[A] - IL IN + PROFET OUT 10000 V OUT + IS - IIS V IN V IS - R IS 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g.
PAGE 10
Data Sheet BTS50055-1TMC Options Overview Type BTS50055-1TMC Overtemperature protection with hysteresis Tj >150 °C, latch function25) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection X with overtemperature shutdown X X switches off when VON>6 V typ. (when first turned on after approx. 180 µs) Overvoltage shutdown - Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -19 V typ X 26 X ) ) Latch except when V -V bb OUT < VON(SC) after shutdown.
PAGE 11
Data Sheet BTS50055-1TMC Characteristics Current sense versus load current: IIS = f(IL), TJ= -40 ...
PAGE 12
Data Sheet BTS50055-1TMC Typ. current limitation characteristic IL = f (VON, Tj ) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] IL [A] 1.6 450 400 1.4 350 1.2 300 1.0 250 0.8 200 T J = 25°C 150 0.6 0.4 100 T J = -40°C 50 T J = 150°C 0.2 0 0 VON(FB) 5 10 15 20 0 VON [V] Typ.
PAGE 13
Data Sheet BTS50055-1TMC Timing diagrams Figure 2c: Switching an inductive load: Figure 1a: Switching a resistive load, change of load current in on-condition: IIN IIN VOUT 90% dV/dtoff t on dV/dton t off 10% IL tslc(IS) Load 1 IIS VOUT IL t slc(IS) Load 2 IIS t tson(IS) t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current.
PAGE 14
Data Sheet BTS50055-1TMC Figure 4e: Overtemperature Reset if Tj
PAGE 15
Data Sheet BTS50055-1TMC Package and Ordering Code All dimensions in mm SMD: PG-TO220-7-4 BTS50055-1TMC Sales Code 4.4 10 ±0.2 1.27 ±0.1 0...0.3 B 0.05 2.4 0.1 3.6 ±0.3 2.1±0.3 7.551) 1±0.3 9.25 ±0.2 (13.85) A 8.5 1) 0...0.15 7 x 0.6 ±0.1 6 x 1.27 1) 0.5 ±0.1 0.25 M A B 8˚MAX. 0.1 B Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Footprint: 10.8 9.4 16.15 4.6 0.47 0.8 8.
PAGE 16
Data Sheet BTS50055-1TMC Revision History Version Date Changes Rev. 1.1 2010-04-27 Rev. 1.0 2008-01-24 Limits of parameter ton changed to min 130µs / max 450µs Limits of parameter toff changed to min 90µs / max 210µs Initial version of data sheet.
PAGE 17
Edition 2010-April-27 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2010. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).