Datasheet, Rev. 1.1, Nov.
Smart High-Side Power Switch BTS5012SDA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Smart High-Side Power Switch PROFET™ One Channel 1 BTS5012SDA Overview Features • • • • • • • • • • Part of scalable product family Load current sense Reversave™ Very low standby current Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage Green Product (RoHS compliant) AEC Qualified PG-TO252-5-11 Vbb(on) Minimum overvoltage protection VON(CL) Maximum on-state resistance at Tj = 150 °C RDS(ON) Nominal load c
Smart High-Side Power Switch BTS5012SDA Overview Protective Functions • • • • • • • • • • Reversave™, channel switches on in case of reverse polarity Reverse battery protection without external components Short circuit protection with latch Overload protection Multi-step current limitation Thermal shutdown with restart Overvoltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD) Diag
Smart High-Side Power Switch BTS5012SDA Block Diagram and Terms 2 Block Diagram and Terms 2.1 Block Diagram logic IC base chip Rbb Vbb voltage sensor over temperature IIN IS VIN gate control & charge pump driver logic current limitation OUT load current sense I IS IL forward voltage drop detection LOAD VIS ESD IN T clamp for inductive load RIS Overview .emf Figure 1 Block Diagram 2.2 Terms Following figure shows all terms used in this data sheet.
Smart High-Side Power Switch BTS5012SDA Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS5012SDA TAB IS OU T 4 5 V bb IN 2 3 OU T 1 Vbb TO252-5 .emf Figure 3 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 OUT Output; output to the load; pin 1 and 5 must be externally shorted.1) 2 IN Input; activates the power switch if shorted to ground. 3 Vbb Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted.
Smart High-Side Power Switch BTS5012SDA General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj= 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Unit Conditions Max. Supply Voltages 4.1.1 4.1.2 Vbb Supply voltage for short circuit protection Vbb(SC) Supply voltage -16 38 V – 0 20 V – – 45 V RI = 2 Ω, RL = 1.
Smart High-Side Power Switch BTS5012SDA General Product Characteristics Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Pos. 4.2.1 4.2.2 Thermal Resistance Parameter Symbol 1) Junction to Case Junction to Ambient free air device on PCB 2) device on PCB3) 1) Limit Values Min.
Smart High-Side Power Switch BTS5012SDA Power Stages 5 Power Stages The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. 5.1 Input Circuit Figure 4 shows the input circuit of the BTS5012SDA. The current source to Vbb ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. VbIN Rbb IIN IN Vbb VZ,IN I VIN Input.
Smart High-Side Power Switch BTS5012SDA Power Stages 5.2 Output On-State Resistance The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 6 shows these dependencies for the typical on-state resistance. The voltage drop in reverse polarity mode is described in Section 6.3.
Smart High-Side Power Switch BTS5012SDA Power Stages 5.3 Output Inductive Clamp When switching off inductive loads, the output voltage VOUT drops below ground potential due to the involved inductance ( -diL/dt = -vL/L ; -VOUT ≅ -VL ). V bb VON VBB IL OUT V OUT L, RL OutputClamp .emf Figure 8 Output Clamp To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level (VON(CL)).
Smart High-Side Power Switch BTS5012SDA Power Stages The energy, which is converted into heat, is limited by the thermal design of the component. For given starting currents the maximum allowed inductance is therefore limited. See Figure 10 for the maximum allowed inductance at Vbb=12V. Vbb = 12 V Tj(o) ≤ 150°C ! Figure 10 Datasheet Maximum load inductance for single pulse, Tj(0) ≤ 150°C. 12 Rev. 1.
Smart High-Side Power Switch BTS5012SDA Power Stages 5.4 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. General 5.4.1 Operating voltage 1) 5.4.2 Undervoltage shutdown 2) 5.4.3 Undervoltage restart of charge pump 5.4.4 Operating current 5.4.5 Stand-by current Tj = -40 °C, Tj = 25 °C Tj = 150 °C Vbb(on) VbIN(u) Vbb(ucp) 5.
Smart High-Side Power Switch BTS5012SDA Power Stages Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. 5.4.16 Slew rate On 25% to 50% VOUT (dV/ dt)ON - 0.3 0.6 V/µs RL = 2.2 Ω, 5.4.17 Slew rate Off 50% to 25% VOUT -(dV/ dt)OFF - 0.3 0.6 V/µs RL = 2.2 Ω, 1) Please mind the limitations of the embedded protection functions. See Chapter 4.
Smart High-Side Power Switch BTS5012SDA Protection Functions 6 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 6.
Smart High-Side Power Switch BTS5012SDA Protection Functions VON(SC) detection Overtemperature detection IIN IIN t VON t IL V ONx > VON(SC) t ILx(SC) IL t Τj tm td(SC1) thermal hysteresis t t Over_Temp.emf V_ON_detect .emf Figure 12 Overload Behavior 6.2 Short circuit impedance The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance.
Smart High-Side Power Switch BTS5012SDA Protection Functions 6.3 Reverse Polarity Protection - Reversave™ The device can not block a current flow in reverse polarity condition. In order to minimize power dissipation, the device offers Reversave™ functionality. In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated VGS ≈ VRbb. Please refer to Figure 14 for details.
Smart High-Side Power Switch BTS5012SDA Protection Functions 6.4 Overvoltage Protection Beside the output clamp for the power stage as described in Section 5.3 there is a clamp mechanism implemented for all logic pins. See Figure 15 for details. Vbb Logic VZ,IS VZ,IN Rbb IN IS Figure 15 Overvoltage Protection 6.5 Loss of Ground Protection OUT OverVoltage .emf In case of complete loss of the device ground connections the BTS5012SDA securely changes to or remains in off state. 6.
Smart High-Side Power Switch BTS5012SDA Protection Functions 6.7 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions A VON = 4V, (Tab to pin 1 and 5) A VON = 6 V, (Tab to pin 1 and 5) A VON = 12 V, tm = 170 µs, Max.
Smart High-Side Power Switch BTS5012SDA Protection Functions Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions V Ibb = 15 mA Max. Overvoltage 6.7.13 Overvoltage protection Input pin Sense pin VZ VZ,IN VZ,IS 63 - - V 63 - - V 1) Not subject to production test, specified by design 2) Short circuit current limit for max.
Smart High-Side Power Switch BTS5012SDA Diagnosis 7 Diagnosis For diagnosis purpose, the BTS5012SDA provides an IntelliSense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as VbIS > 5V. The ratio of the output current is defined as kILIS = IL / IIS. During switch-on no current is provided, until the forward voltage drops below VON < 1V typ. The output sense current is limited to IIS(lim).
Smart High-Side Power Switch BTS5012SDA Diagnosis 25000 k ILIS 20000 15000 max. 10000 typ. min. 5000 0 0 Figure 18 5 10 15 20 A 25 30 IL Current sense ratio kILIS1) Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ONstate can be found in Figure 19.
Smart High-Side Power Switch BTS5012SDA Diagnosis 7.1 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. - 10 - 8.4 8.0 7.2 4.8 10 10 10 12 11.3 12 14 21.5 Unit Conditions k VIN = 0 V, IIS < IIS(lim) - - VON < 1 V, typ. VON > 1 V, typ. Max. Load Current Sense 7.1.1 Current sense ratio, static oncondition kILIS IL = 30 A IL = 7.5 A IL = 2.5 A IL = 0.
Smart High-Side Power Switch BTS5012SDA Package Outlines 8 Package Outlines Figure 20 PG-TO252-5-11 Green Product To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Smart High-Side Power Switch BTS5012SDA Revision History 9 Version Revision History Date Changes Datasheet Rev. 1.1 2008-11-04 Page 13: Parameter IIN(off) updated from maximum 10µA to maximum 30µA. Datasheet Rev. 1.0 2008-01-22 Initial version of datasheet Datasheet 25 Rev. 1.
Edition 2008-11-04 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
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