Smart High-Side Power Switch BTS640S2G Smart Sense High-Side Power Switch Product Summary Operating voltage On-state resistance Load current (ISO) Current limitation Features 5.0 ... 34 V 30 mΩ 12.
Smart High-Side Power Switch BTS640S2G Pin Symbol 1 ST Function Diagnostic feedback: open drain, invers to input level 2 GND Logic ground 3 IN Input, activates the power switch in case of logical high signal 4 Vbb 5 IS Positive power supply voltage, the tab is shorted to this pin Sense current output, proportional to the load current, zero in the case of current limitation of load current 6&7 OUT (Load, L) Output, protected high-side power output to the load.
Smart High-Side Power Switch BTS640S2G Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC junction - ambient (free air): RthJA SMD version, device on PCB4): min ---- Values typ max -- 1.
Smart High-Side Power Switch BTS640S2G Parameter and Conditions at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Operating Parameters Operating voltage 5) Undervoltage shutdown Undervoltage restart 5.0 3.2 -- --4.5 34 5.0 5.5 6.0 V V V ---- 4.7 -0.5 6.5 7.0 -- V 34 33 -41 43 --1 -47 43 ---52 V V V V ---- 4 12 -- 15 25 10 µA -- 1.2 3 mA Vbb(on) Tj =-40...+150°C: Vbb(under) Tj =-40...
Smart High-Side Power Switch BTS640S2G Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions8) Initial peak short circuit current limit (pin 4 to 6&7) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit IL(SCr) Tj = Tjt (see timing diagrams, page 12) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL); IL= 40 mA, Tj =-40°C: Tj =+25..
Smart High-Side Power Switch BTS640S2G BTS 640 S2 Parameter and Conditions Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Current sense settling time to IIS static±10% after 5 A, positive input slope13) , IL = 0 Values min typ max Unit tson(IS) -- -- 300 µs Current sense settling time to 10% of IIS static after negative input slope13) , IL = 5 0A, tsoff(IS) -- 30 100 µs -- 10 -- µs 2 3 4 V 5 15 40 kΩ 3,0 4,5 7,0 kΩ -1.5 -- --0.5 3.
Smart High-Side Power Switch BTS640S2G Truth Table Normal operation Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Undervoltage Overvoltage Negative output voltage clamp L = "Low" Level H = "High" Level 16) 17) 18) 19) 20) Input Output Status Current Sense level level level IIS L H L H L H L H L H L H L H L H L L H L H L L16) L L H H H L H H H H H H L17) L H (L20)) L H L H L H 0 nominal 0 0 0 0 0 0 0
Smart High-Side Power Switch BTS640S2G Status output Terms 9 9 EE , ,1 , 67 9 ,1 , ,6 ,EE 921 9EE ,1 287 5 67 21 ,/ 67 352)(7 67 287 ,6 967 9 ,6 *1' 5 *1' 9 (6' =' *1' 287 , *1' ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 440 Ω at 1.6 mA, The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.
Smart High-Side Power Switch BTS640S2G Overvoltage protection of logic part GND disconnect 9 9 EE 5 67 9 5, ,1 9 EE = 67 /RJLF ,6 59 9 5 ,6 ,EE ,1 9EE 67 352)(7 287 287 ,6 *1' = 9 9 9 ,1 67 ,6 *1' 5 *1' 9 *1' Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . 6LJQDO *1' Due to VGND >0, no VST = low signal available. VZ1 = 6.1 V typ., VZ2 = 47 V typ.
Smart High-Side Power Switch BTS640S2G Vbb disconnect with charged external inductive load KLJK 9EE ,1 287 67 352)(7 ' 287 ,6 *1' 5/ / 9 EE If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
Smart High-Side Power Switch BTS640S2G Figure 2a: Switching a lamp Timing diagrams ,1 Figure 1a: Switching a resistive load, change of load current in on-condition: 67 ,1 67 9 W don(ST) 9287 W on ,/ W off Wslc(IS) ,/ 287 W doff(ST) W slc(IS) , ,6 /RDG ,,6 W son(IS) W /RDG W soff(IS) W Figure 2b: Switching a lamp with current limit: ,1 The sense signal is not valid during settling time after turn or change of load current.
Smart High-Side Power Switch BTS640S2G Figure 4a: Overtemperature: Reset if Tj
Smart High-Side Power Switch BTS640S2G Figure 6b: Undervoltage restart of charge pump Figure 5b: Open load: detection in ON- and OFF-state (with REXT), turn on/off to open load 921 &/ 9 RQ ,1 RQ VWDWH RII VWDWH 67 9 RII VWDWH WG 67 2/ EE RYHU 9 287 9 9 EE X UVW 9 , / 9 RSHQ ORDG EE R UVW EE X FS EE XQGHU 9 EE , ,6 W charge pump starts at Vbb(ucp) =4.7 V typ.
Smart High-Side Power Switch BTS640S2G Figure 8b: Current sense ratio21: Figure 8a: Current sense versus load current: >P$@ N ,/,6 , ,6 ,/ >$@ , / >$@ Figure 9a: Output voltage drop versus load current: 921 >9@ 521 921 1/ ,/ 21 Data Sheet 14 >$@ This range for the current sense ratio refers to all devices.
Smart High-Side Power Switch BTS640S2G Package Outlines 4.4 7.5 B 0.05 6.5 4.7 ±0.5 1±0.3 6.6 9.2 ±0.2 (14.9) 10.2 ±0.15 1.3 +0.1 -0.02 A 2.7 ±0.5 9.9 1) 0.1 17 0...0.15 7x 2.4 0.5 ±0.15 0.6 +0.1 -0.03 6 x 1.27 8° M AX. 0.25 M AB 0.1 B 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal sufaces tin plated, except area of cut .
Smart High-Side Power Switch BTS640S2G Revision History Version V1.1 Data Sheet Date Changes 2008-19-08 Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. 16 V1.
Edition 2008-19-08 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 8/19/08. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).
