Datasheet
Rev. 2.5 Page 1 2010-07-02
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
D
R
DS(on)
Package
Pb-free
BUZ 30A H
200 V
21 A
0.13
Ω
PG-TO-220-3
Yes
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 26 ˚C
I
D
21
A
Pulsed drain current
T
C
= 25 ˚C
I
Dpuls
84
Avalanche current,limited by
T
jmax
I
AR
21
Avalanche energy,periodic limited by
T
jmax
E
AR
12
mJ
Avalanche energy, single pulse
I
D
= 21 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 1.53 mH,
T
j
= 25 ˚C
E
AS
450
Gate source voltage
V
GS
±
20
V
Power dissipation
T
C
= 25 ˚C
P
tot
125
W
Operating temperature
T
j
-55 ... + 150
˚C
Storage temperature
T
stg
-55 ... + 150
Thermal resistance, chip case
R
thJC
≤
1
K/W
Thermal resistance, chip to ambient
R
thJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
BUZ 30A H
. Halogen-free according to IEC61249-2--21