Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF1010NS, MOSFET N channel 85A 55V

IRF1010NS

IRF1010NL

HEXFET

Power MOSFET

02/14/02

DSS

= 55V

DS(on)

= 11mΩ

= 85A

Advanced HEXFET

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010NL) is available for low-

profile applications.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V  85

@ T

= 100°C Continuous Drain Current, V

@ 10V  60 A

Pulsed Drain Current  290

= 25°C Power Dissipation 180 W

Linear Derating Factor 1.2 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 43 A

Repetitive Avalanche Energy 18 mJ

dv/dt Peak Diode Recovery dv/dt  3.6 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

D Pak

TO-262

IRF1010NLIRF1010NS

www.irf.com 1

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.85

θJA

Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 °C/W

Thermal Resistance

PD - 94171

Summary of content (10 pages)

PAGE 1
PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF1010NS IRF1010NL l HEXFET® Power MOSFET l D VDSS = 55V RDS(on) = 11mΩ G Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF1010NS/IRF1010NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRF1010NS/IRF1010NL 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 4.5V 10 20µs PULSE WIDTH T = 25 C ° J 1 0.1 1 10 10 20µs PULSE WIDTH T = 175 C 100 ° J 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.
PAGE 4
IRF1010NS/IRF1010NL VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 5000 C, Capacitance(pF) Coss = Cds + Cgd Ciss 4000 3000 Coss 2000 Crss 1000 VGS , Gate-to-Source Voltage (V) 20 6000 0 ID = 43A VDS = 44V VDS = 27V VDS = 11V 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 0 100 40 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF1010NS/IRF1010NL 100 LIMITED BY PACKAGE VDS VGS I D , Drain Current (A) 80 RD D.U.T. RG + -VDD 60 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.
PAGE 6
15V L VDS D .U .T RG IA S 2V0GS V tp D R IV E R + V - DD A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp EAS , Single Pulse Avalanche Energy (mJ) IRF1010NS/IRF1010NL 500 TOP 400 BOTTOM ID 18A 30A 43A 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T.
PAGE 7
IRF1010NS/IRF1010NL Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF1010NS/IRF1010NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 3 15.49 (.610) 14.73 (.580) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200 ) 0.55 (.022) 0.46 (.018) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M 8.89 (.350) REF. 1 .39 (.055) 1 .14 (.
PAGE 9
IRF1010NS/IRF1010NL Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.
PAGE 10
IRF1010NS/IRF1010NL Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C TIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.