Datasheet

2/28/08
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
www.irf.com 1
Applications
l High Efficiency Synchronous Rectification in
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
HEXFET
®
Power MOSFET
S
D
G
PD - 97125
D
2
Pak
IRF1018ESPbF
TO-220AB
IRF1018EPbF
TO-262
IRF1018ESLPbF
S
D
G
S
D
G
S
D
G
D
D
D
GDS
Gate Drain Source
IRF1018EPbF
IRF1018ESPbF
IRF1018ESLPbF
V
DSS
60V
R
DS(on)
typ.
7.1m
:
max.
8.4m
:
I
D
79A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
k
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
j –––
1.32
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
0.50 –––
R
θ
JA
Junction-to-Ambient, TO-220
j ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
ij
––– 40
11
110
21
-55 to + 175
± 20
0.76
10lb
x
in (1.1N
x
m)
°C/W
300
Max.
79
56
315
88
47