Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF1404LPBF, MOSFET

IRF1404SPbF

IRF1404LPbF

HEXFET

Power MOSFET

Seventh Generation HEXFET

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFET power MOSFETs are well known for, provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0W in a typical surface mount application.

The through-hole version (IRF1404L) is available for low-

profile applications.

Absolute Maximum Ratings

Thermal Resistance

DSS

= 40V

DS(on)

= 0.004Ω

= 162A

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Lead-Free

Description

03/11/04

www.irf.com 1

Pak

IRF1404SPbF

TO-262

IRF1404LPbF

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 162

@ T

= 100°C Continuous Drain Current, V

@ 10V 115 A

Pulsed Drain Current  650

= 25°C Power Dissipation 3.8 W

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 519 mJ

Avalanche Current 95 A

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to +175

STG

Storage Temperature Range -55 to +175

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.75 °C/W

θJA

Junction-to-Ambient (PCB mounted, steady-state)* ––– 40

PD -95104

Summary of content (11 pages)

PAGE 1
PD -95104 l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRF1404SPbF IRF1404LPbF HEXFET® Power MOSFET D RDS(on) = 0.004Ω G Description ID = 162A S Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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IRF1404S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
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IRF1404S/LPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 4.5V 100 100 4.5V 20µs PULSE WIDTH TJ = 25 °C 10 0.1 1 10 10 0.1 100 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 100 V DS = 25V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics www.irf.
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IRF1404S/LPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 10000 Ciss 8000 6000 4000 Coss 2000 20 VGS , Gate-to-Source Voltage (V) 12000 1 10 12 8 4 0 100 VDS , Drain-to-Source Voltage (V) 0 40 80 120 160 200 240 Fig 6. Typical Gate Charge Vs.
PAGE 5
IRF1404S/LPbF 200 LIMITED BY PACKAGE VGS 160 ID , Drain Current (A) RD VDS D.U.T. RG 120 + -V DD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 80 Fig 10a. Switching Time Test Circuit 40 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 1 D = 0.50 0.20 0.1 0.10 PDM 0.05 t1 0.02 0.01 0.01 0.
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IRF1404S/LPbF D.U.T RG + V - DD IAS 20V 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp TOP 1000 DRIVER L VDS EAS , Single Pulse Avalanche Energy (mJ) 1200 15V A I AS BOTTOM ID 39A 67A 95A 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 50 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.
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IRF1404S/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF1404S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL R E C T IF IE R L OGO N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" P AR T N U M B E R F 5 30 S AS S E M B L Y L O T CO D E D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T I
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IRF1404S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.
PAGE 10
IRF1404S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.
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Note: For the most current drawings please refer to the IR website at: http://www.irf.