Datasheet
06/19/12
www.irf.com 1
HEXFET
®
Power MOSFET
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
S
D
G
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Features
IRF1404ZPbF
IRF1404ZSPbF
IRF1404ZLPbF
D
2
Pak
IRF1404ZSPbF
TO-220AB
IRF1404ZPbF
TO-262
IRF1404ZLPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(S ilicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(P ackage L imited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case –––
0.75
R
θ
CS
Case-to-Sink, Flat Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient ––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) ––– 40
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°C/W
Max.
180
120
710
120
-55 to + 175
480
330
See Fig.12a, 12b, 15, 16
200
1.3
± 20
V
(BR)DSS
40V
R
DS(on)
typ. 2.7m
Ω
max. 3.7m
Ω
I
D (Silicon Limited)
180A
I
D (Package Limited)
120A
PD - 96040C