Datasheet

HEXFET
®
Power MOSFET
This Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this
HEXFET power MOSFET are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in
a wide variety of applications.
S
D
G
V
DSS
= 55V
R
DS(on)
= 5.3mΩ
I
D
= 169A
Description
05/12/10
www.irf.com 1
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Benefits
TO-220AB
IRF1405PbF
Typical Applications
l Industrial motor drive
Absolute Maximum Ratin
g
s
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
dv/dt Peak Diode recovery dv/dt
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter T
yp
. Max.
Units
R
θJC
Junction-to-Case ––– 0.45
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 –––
°C/W
R
θJA
Junction-to-Ambient ––– 62
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)
330
2.2
± 20
Max.
169
118
680
560
See Fig.12a, 12b, 15, 16
5.0
S
D
G
D
PD - 94969B