Datasheet
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 131
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 93 A
I
DM
Pulsed Drain Current 680
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 590 mJ
I
AR
Avalanche Current See Fig.12a, 12b, 15, 16 A
E
AR
Repetitive Avalanche Energy mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting Torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
HEXFET
®
Power MOSFET
Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide variety
of applications.
S
D
G
Absolute Maximum Ratings
V
DSS
= 55V
R
DS(on)
= 5.3mΩ
I
D
= 131A
Description
07/14/10
www.irf.com 1
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75 °C/W
R
θJA
Junction-to-Ambient (PCB mount) ––– 40
D
2
Pak
IRF1405SPbF
TO-262
IRF1405LPbF
IRF1405SPbF
IRF1405LPbF
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Benefits
PD-95331A
Typical Applications
Industrial Motor Drive