Datasheet

IRF2804S-7PPbF
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 1.6mΩ
I
D
= 160A
07/22/10
www.irf.com 1
HEXFET
®
is a registered trademark of International Rectifier.
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
––– 0.50 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θ
JA
Junction-to-Ambient
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
Max.
320
230
1360
160
10 lbf•in (1.1N•m)
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
S (Pin 2, 3 ,5,6,7)
G (Pin 1)
PD - 97057A