Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF2903ZSPBF, MOSFET

07/22/10

www.irf.com 1

HEXFET

Power MOSFET

This HEXFET

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features combine

to make this design an extremely efficient and

reliable device for use in a wide variety of

applications.

Description

l Advanced Process Technology

l Ultra Low On-Resistance

l 175°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free

Features

IRF2903ZSPbF

IRF2903ZLPbF

DSS

= 30V

DS(on)

= 2.4mΩ

= 75A

GDS

Gate Drain Source

Pak TO-262

Absolute Maximum Ratings

Parameter Units

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Silicon Limited)

@ T

= 100°C

Continuous Drain Current, V

@ 10V

(Silicon Limited)

@ T

= 25°C

Continuous Drain Current, V

@ 10V

(Package Limited)

Pulsed Drain Current

= 25°C Power Dissipation

Linear Derating Factor

W/°C

Gate-to-Source Voltage

AS (Thermally limited)

Single Pulse Avalanche Energy

(Tested )

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max.

Units

θJC

Junction-to-Case ––– 0.65

θJA

Junction-to-Ambient ––– 62

θJA

Junction-to-Ambient (PCB Mount, steady state)

––– 40

-55 to + 175

300 (1.6mm from case )

231

1.54

± 20

Max.

235

166

1020

820

231

See Fig.12a, 12b, 15, 16

PD - 96098A

Summary of content (11 pages)

PAGE 1
PD - 96098A IRF2903ZSPbF IRF2903ZLPbF Features l l l l l l HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 30V RDS(on) = 2.4mΩ G ID = 75A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF2903ZS/ZLPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Min. Typ. Max.
PAGE 3
IRF2903ZS/ZLPbF 1000 1000 ID, Drain-to-Source Current (A) TOP 100 BOTTOM 10 4.5V TOP ID, Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM 100 4.5V ≤ 60µs PULSE WIDTH Tj = 25°C ≤ 60µs PULSE WIDTH Tj = 175°C 1 10 0.1 1 10 100 1000 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 240 100.0 Gfs, Forward Transconductance (S) 1000.
PAGE 4
IRF2903ZS/ZLPbF 12000 20 10000 C, Capacitance (pF) Coss = Cds + Cgd 8000 Ciss 6000 4000 Coss 2000 ID= 75A VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Crss 16 12 8 4 0 0 1 10 0 100 1000.0 10000 TJ = 175°C ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 80 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100.
PAGE 5
IRF2903ZS/ZLPbF 2.0 Limited By Package 200 ID, Drain Current (A) RDS(on) , Drain-to-Source On Resistance (Normalized) 240 160 120 80 40 ID = 75A VGS = 10V 1.5 1.0 0.5 0 25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) T C , Case Temperature (°C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.
PAGE 6
IRF2903ZS/ZLPbF 600 DRIVER L VDS D.U.T RG 20V VGS + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 15V ID 26A 42A BOTTOM 75A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature (°C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG QGS QGD 4.5 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.
PAGE 7
IRF2903ZS/ZLPbF 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 0.10 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.
PAGE 8
IRF2903ZS/ZLPbF D.U.T Driver Gate Drive + • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T.
PAGE 9
IRF2903ZS/ZLPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information T HIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS S EMBLY
PAGE 10
IRF2903ZS/ZLPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMB LED ON WW 19, 1997 IN T HE AS SEMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS SEMBLY S IT E CODE Notes: 1.
PAGE 11
IRF2903ZS/ZLPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1.