Datasheet
HEXFET
®
Power MOSFET
IRF3205
PD - 9.1279D
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
8/25/97
V
DSS
= 55V
R
DS(on)
= 0.008Ω
I
D
= 110A
S
D
G
TO-220AB
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case –––– –––– 0.75
R
θCS
Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W
R
θJA
Junction-to-Ambient –––– –––– 62
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 110
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 80 A
I
DM
Pulsed Drain Current 390
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ±20 V
E
AS
Single Pulse Avalanche Energy 480 mJ
I
AR
Avalanche Current 59 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
Absolute Maximum Ratings