Datasheet

10/7/03
www.irf.com 1
AUTOMOTIVE MOSFET
PD - 94653B
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 6.5m
I
D
= 75A
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
S
D
G
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Features
IRF3205Z
IRF3205ZS
IRF3205ZL
D
2
Pak
IRF3205ZS
TO-220AB
IRF3205Z
TO-262
IRF3205ZL
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
P
u
l
se
d
D
ra
i
n
C
urrent
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS (Thermally limited)
Si
ng
l
e
P
u
l
se
A
va
l
anc
h
e
E
nergy
mJ
E
AS
(Tested )
Si
ng
l
e
P
u
l
se
A
va
l
anc
h
e
E
nergy
T
este
d
V
a
l
ue
I
AR
A
va
l
anc
h
e
C
urrent
A
E
AR
R
epet
i
t
i
ve
A
va
l
anc
h
e
E
nergy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 0.90 °C/W
R
θCS
Case-to-Sink, Flat Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient
––– 62
R
θJA
Junction-to-Ambient (PCB Mount)
––– 40
250
180
See Fig.12a, 12b, 15, 16
170
1.1
± 20
Max.
110
78
440
75
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N m)

Summary of content (12 pages)