Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF3710, MOSFET N channel 57A voltage:100V

IRF3710

HEXFET

Power MOSFET

01/17/02

Parameter Typ. Max. Units

θJC

Junction-to-Case ––– 0.75

θCS

Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

θJA

Junction-to-Ambient ––– 62

Thermal Resistance

www.irf.com 1

DSS

= 100V

DS(on)

= 23mΩ

= 57A

TO-220AB

Advanced HEXFET

Power MOSFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts. The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description

Absolute Maximum Ratings

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 57

@ T

= 100°C Continuous Drain Current, V

@ 10V 40 A

Pulsed Drain Current  230

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 20 V

Avalanche Current 28 A

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  5.8 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

PD - 91309A

Summary of content (8 pages)

PAGE 1
PD - 91309A IRF3710 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF3710 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 100 ––– ––– 2.
PAGE 3
IRF3710 1000 1000 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V 100 VGS 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V BOTTOM 3.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 3.5V 1 100 10 3.5V 1 20µs PULSE WIDTH Tj = 25°C 20µs PULSE WIDTH Tj = 175°C 0.1 0.1 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000.
PAGE 4
IRF3710 12 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 1000 Coss Crss 100 V DS = 20V 10 VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) Ciss V DS = 80V V DS = 50V Coss = Cds + Cgd 10000 ID = 28A 10 7 5 2 0 1 10 0 100 20 40 60 80 100 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.
PAGE 5
IRF3710 60 RD VDS VGS 50 D.U.T. RG + -VDD I D , Drain Current (A) 40 VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 TC , Case Temperature 125 150 175 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 (Z thJC) D = 0.50 Thermal Response 0.20 0.1 0.10 P DM 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1.
PAGE 6
IRF3710 550 ID 1 5V TOP 11A 20A VD S D .U .T RG IA S 2V0GS V 440 D R IV E R + - VD D A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp E AS , Single Pulse Avalanche Energy (mJ) L BOTTOM 28A 330 220 110 0 25 50 75 100 125 150 175 ( °C) Starting T , Junction Temperature J Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF VGS QGS D.U.T.
PAGE 7
IRF3710 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF3710 Package Outline TO-220AB Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (.10 3) -B - 3 .7 8 (.149 ) 3 .5 4 (.139 ) 4.69 ( .18 5 ) 4.20 ( .16 5 ) -A - 1 .32 (.05 2) 1 .22 (.04 8) 6.47 (.25 5) 6.10 (.24 0) 4 1 5.24 (.60 0) 1 4.84 (.58 4) 1.15 (.04 5) M IN 1 2 1 4.09 (.55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X L E A D A S S IG NM E NT S 1 - GATE 2 - D R A IN 3 - S O U RC E 4 - D R A IN 3 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (.