Datasheet

HEXFET
®
Power MOSFET
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.75 °C/W
R
θJA
Junction-to-Ambient (PCB Mounted,steady-state)** ––– 40
Thermal Resistance
V
DSS
= 100V
R
DS(on)
= 23mΩ
I
D
= 57A
S
D
G
Advanced HEXFET
®
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 57
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 40 A
I
DM
Pulsed Drain Current  180
P
D
@T
C
= 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 28 A
E
AR
Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt  5.8 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
D
2
Pak
IRF3710SPbF
TO-262
IRF3710LPbF
IRF3710SPbF
IRF3710LPbF
1
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