Datasheet

www.irf.com 1
8/10/04
IRF3717PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 10
Benefits
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
l Fully Characterized Avalanche Voltage
and Current
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
PD - 95719
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead ––– 20 °C/W
R
θ
JA
Junction-to-Ambient
––– 50
-55 to + 150
2.5
0.02
1.6
Max.
20
16
160
± 20
20
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
V
DSS
R
DS(on)
max
I
D
20V
4.4m
@V
GS
= 10V
20A