Datasheet

IRF3805S-7PPbF
IRF3805L-7PPbF
HEXFET
®
Power MOSFET
V
DSS
= 55V
R
DS(on)
= 2.6mΩ

I
D
= 160A
HEXFET
®
is a registered trademark of International Rectifier.
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
S
D
G
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
S (Pin 2, 3, 5, 6, 7)
G (Pin 1)
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
A
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
mJ
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 0.50 °C/W
R
θCS
Case-to-Sink, Flat, Greased Surface
0.50 –––
R
θJA
Junction-to-Ambient
––– 62
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
Max.
240
170
1000
160
10 lbf•in (1.1N•m)
300
2.0
± 20
440
680
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
D
2
Pak 7 Pin
IRF3805S-7PPbF
TO-263CA 7 Pin
IRF3805L-7PPbF
1
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