Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF5210PBF, MOSFET P channel -40A -100V

IRF5210PbF

HEXFET

Power MOSFET

PD - 95408

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ -10V -40

@ T

= 100°C Continuous Drain Current, V

@ -10V -29 A

Pulsed Drain Current  -140

= 25°C Power Dissipation 200 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 20 V

Single Pulse Avalanche Energy 780 mJ

Avalanche Current -21 A

Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns

Operating Junction and -55 to + 175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm)

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJC

Junction-to-Case  0.75

θCS

Case-to-Sink, Flat, Greased Surface 0.50  °C/W

θJA

Junction-to-Ambient  62

Thermal Resistance

DSS

= -100V

DS(on)

= 0.06Ω

= -40A

TO-220AB

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l P-Channel

l Fully Avalanche Rated

l Lead-Free

Description

06/15/04

Summary of content (9 pages)

PAGE 1
PD - 95408 IRF5210PbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = -100V RDS(on) = 0.06Ω G ID = -40A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF5210PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRF5210PbF 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 40µs PULSE WIDTH Tc = 25°C A 1 1 10 -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) 100 0.1 100 10 -4.5V R DS(on) , Drain-to-Source On Resistance (Normalized) -ID , Drain-to-Source Current (A) 3.0 100 TJ = 25°C TJ = 175°C 10 VDS = -50V 40µs PULSE WIDTH 6 7 8 9 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10 A 100 Fig 2.
PAGE 4
IRF5210PbF 5000 C, Capacitance (pF) Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) 6000 4000 Coss 3000 Crss 2000 1000 0 10 VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 I D = -21A 0 100 40 -VDS , Drain-to-Source Voltage (V) 120 160 A 200 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF5210PbF RD VDS 50 V GS D.U.T. RG - -ID , Drain Current (A) 40 + VDD -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 td(on) 10 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1.
PAGE 6
IRF5210PbF D.U.T RG IAS -20V tp VDD A DRIVER 0.01Ω 15V Fig 12a. Unclamped Inductive Test Circuit I AS E AS , Single Pulse Avalanche Energy (mJ) L VDS 2000 TOP BOTTOM 1600 ID -8.6A -15A -21A 1200 800 400 A 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V -10V .2µF .3µF QGS QGD D.U.T.
PAGE 7
IRF5210PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test V GS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF5210PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 4- COLLECTOR 4.06 (.160) 3.55 (.
PAGE 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.