Datasheet

www.irf.com 1
04/20/10
IRF5801PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Lead-Free
l Halogen-Free
V
DSS
R
DS(on)
max I
D
200V 2.2W 0.6A
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 0.6
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 0.48 A
I
DM
Pulsed Drain Current  4.8
P
D
@T
A
= 25°C Power Dissipation 2.0 W
Linear Derating Factor 0.016 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  9.6 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes  through  are on page 8
TSOP-6
Symbol Parameter Typ. Max. Units
R
θJA
Junction-to-Ambient  ––– 62.5 °C/W
Thermal Resistance
PD-95474B