Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF5805TRPBF, MOSFET

HEXFET

Power MOSFET

04/20/10

IRF5805PbF

Absolute Maximum Ratings

www.irf.com 1

Thermal Resistance

Parameter Max. Units

Drain-Source Voltage -30 V

@ T

= 25°C Continuous Drain Current, V

@ -10V -3.8

@ T

= 70°C Continuous Drain Current, V

@ -10V -3.0 A

Pulsed Drain Current -15

= 25°C Maximum Power Dissipation 2W

= 70°C Maximum Power Dissipation 1.28 W

Linear Derating Factor 0.02 W/°C

Gate-to-Source Voltage ± 20 V

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

Description

DSS

DS(on)

max I

-30V 0.098@V

= -10V -3.8A

0.165@V

= -4.5V -3.0A

Parameter Max. Units

θJA

Maximum Junction-to-Ambient 62.5 °C/W

Top View

These P-channel MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the

extremely low on-resistance per silicon area. This

benefit provides the designer with an extremely efficient

device for use in battery and load management

applications.

The TSOP-6 package with its customized leadframe

produces a HEXFET

power MOSFET with R

DS(on)

60% less than a similar size SOT-23. This package is

ideal for applications where printed circuit board space

is at a premium. It's unique thermal design and R

DS(on)

reduction enables a current-handling increase of nearly

300% compared to the SOT-23.

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Low Gate Charge

l Lead-Free

l Halogen-Free

TSOP-6

PD -95340A

Summary of content (9 pages)

PAGE 1
PD -95340A IRF5805PbF l l l l l l l HEXFET® Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS(on) max ID -30V 0.098@VGS = -10V 0.165@VGS = -4.5V -3.8A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
PAGE 2
IRF5805PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRF5805PbF VGS TOP -10.0V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V BOTTOM -2.5V 10 1 0.1 -2.5V 100 10 1 -2.5V 0.1 0.01 0.01 1 10 20µs PULSE WIDTH Tj = 150°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) 10 TJ = 150° C TJ = 25 ° C V DS = -15V 20µs PULSE WIDTH 3.0 4.0 5.0 10 100 Fig 2. Typical Output Characteristics 100 0.1 2.
PAGE 4
IRF5805PbF VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 600 Ciss 400 200 Coss Crss 16 -VGS , Gate-to-Source Voltage (V) 800 0 1 10 8 4 0 4 6 8 10 12 14 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF5805PbF 4.0 VDS -ID , Drain Current (A) V GS 3.0 RD D.U.T. RG - + VDD VGS 2.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 TC , Case Temperature ( °C) 10% 150 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response(Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 PDM 0.01 1 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 t2 Notes: 1.
PAGE 6
0.500 RDS ( on ) , Drain-to-Source On Resistance (Ω ) ( RDS(on), Drain-to -Source On ResistanceΩ) IRF5805PbF 0.450 0.400 0.350 0.300 0.250 0.200 ID = -3.8A 0.150 0.100 0.050 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.400 0.300 VGS = -4.5V 0.200 VGS = -10V 0.100 0.000 0 5 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 10 15 20 -ID , Drain Current ( A ) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG QGS .
PAGE 7
IRF5805PbF 30 2.5 25 2.3 Power (W) -VGS(th) ( V ) 20 ID = -250µA 2.1 1.9 15 10 1.7 5 0 1.5 -75 -50 -25 0 25 50 75 100 TJ , Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 125 150 0.001 0.010 0.100 1.000 10.000 100.000 Time (sec) Fig 16. Typical Power Vs.
PAGE 8
IRF5805PbF TSOP-6 Package Outline TSOP-6 Part Marking Information 5 $ ( < 5 $ ' 1 ( / $ & ) 2 ,7 ,* ' 7 6 $ / < % ' ( ' ( & ( 5 3 ,) : : $ % & ' .. 5( 2( :: 7 2 / 5 2 7 $ ,& ' ,1 ( ,5 : 8 & 3 2 7 ( ' 2 & ; < = ( & 1 ( 5 ( ) ( 5 ( ' 2 & 5 ( % 0 8 1 7 5 $ 3 < .
PAGE 9
IRF5805PbF TSOP-6 Tape & Reel Information Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/2010 www.irf.