Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF630N, MOSFET N channel 9.3A 200V

HEXFET

Power MOSFET

10/11/00

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 9.3

@ T

= 100°C Continuous Drain Current, V

@ 10V 6.5 A

Pulsed Drain Current  37

= 25°C Power Dissipation 82 W

Linear Derating Factor 0.5 W/°C

Gate-to-Source Voltage ±20 V

Single Pulse Avalanche Energy 94 mJ

Avalanche Current 9.3 A

Repetitive Avalanche Energy 8.2 mJ

dv/dt Peak Diode Recovery dv/dt  8.1 V/ns

Operating Junction and -55 to +175

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Description

DSS

= 200V

DS(on)

= 0.30Ω

= 9.3A

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements

Pak

IRF630NS

TO-220AB

IRF630N

TO-262

IRF630NL

IRF630N

IRF630NS

IRF630NL

Fifth Generation HEXFET

Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide

variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

The D

Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

Pak is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF630NL) is available for low-

profile application.

www.irf.com 1

PD - 94005A

Summary of content (11 pages)

PAGE 1
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description l HEXFET® Power MOSFET l D RDS(on) = 0.30Ω G Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF630N/S/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min.
PAGE 3
IRF630N/S/L 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 1 4.5V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 4.5V 1 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 ° C 5.0 10 100 Fig 2.
PAGE 4
IRF630N/S/L 1200 VGS , Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance(pF) 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED 800 Ciss 600 Coss 400 Crss 200 V DS= 160V V DS= 100V V DS= 40V 12 8 4 0 0 1 10 100 0 1000 5 10 15 20 25 30 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
PAGE 5
IRF630N/S/L RD VDS 12 12 VGS D.U.T. RG + V DD ID , Drain Current (A) ID , Drain Current (A) 9 - 9 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 6 Fig 10a. Switching Time Test Circuit VDS 3 3 0 90% 0 25 25 50 50 75 100 125 150 125 ° C) TC 75 , Case100 Temperature (150 TC , Case Temperature ( ° C) 175 175 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.
PAGE 6
15V L VDS D R IV E R D .U .T RG + - VD D IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp A EAS , Single Pulse Avalanche Energy (mJ) IRF630N/S/L 200 ID 2.2A 3.8A BOTTOM 5.4A TOP 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T.
PAGE 7
IRF630N/S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF630N/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .87 (.11 3 ) 2 .62 (.10 3 ) 10.5 4 (.4 15 ) 10.2 9 (.4 05 ) -B- 3 .78 (.14 9 ) 3 .54 (.13 9 ) 4 .69 (.1 85 ) 4 .20 (.1 65 ) -A - 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 6.4 7 (.255 ) 6.1 0 (.240 ) 4 15 .24 (.6 00 ) 14 .84 (.5 84 ) 1.1 5 (.0 45) M IN 1 2 L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN 3 14 .09 (.5 55 ) 13 .47 (.5 30 ) 4 .0 6 (.16 0 ) 3 .5 5 (.14 0 ) 3X 1.4 0 (.0 55 ) 3X 1.
PAGE 9
IRF630N/S/L D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 3 15.4 9 (.610) 14.7 3 (.580) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M 8.8 9 (.350) REF. 1.39 (.055) 1.14 (.
PAGE 10
IRF630N/S/L TO-262 Package Outline TO-262 Part Marking Information www.irf.
PAGE 11
IRF630N/S/L D2Pak Tape & Reel Information TRR 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1.6 0 (.06 3 ) 1.5 0 (.05 9 ) 1 1.60 (.4 57 ) 1 1.40 (.4 49 ) 0.3 68 (.014 5 ) 0.3 42 (.013 5 ) 2 4.30 (.95 7) 2 3.90 (.94 1) 1 5.42 (.6 09 ) 1 5.22 (.6 01 ) TR L 10.90 (.42 9) 10.70 (.42 1) 1.75 (.069 ) 1.25 (.049 ) 4.7 2 (.1 36 ) 4.5 2 (.1 78 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.