Datasheet

www.irf.com 1
5/5/06
DirectFET Power MOSFET 
DirectFET ISOMETRIC
ST
Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ SX ST MQ MX MT
Description
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in
synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET
socket.
2.0 4.0 6.0 8.0 10.0
V
GS
, Gate-to-Source Voltage (V)
4
8
12
16
20
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 12.7A
0 1020304050
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
VDS= 20V
I
D
= 10.2A
V
DSS
V
GS
R
DS(on)
R
DS(on)
40V max ±20V max
5.9mΩ@ 10V 7.1mΩ@ 4.5V
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V
 Click on this section to link to the appropriate technical paper.
 Click on this section to link to the DirectFET Website.
 Surface mounted on 1 in. square Cu board, steady state.
 T
C
measured with thermocouple mounted to top (Drain) of part.
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T
J
= 25°C, L = 0.43mH, R
G
= 25Ω, I
AS
= 10.2A.
Notes:
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
10.2
Max.
10.1
55
102
±20
40
12.7
22
PD -97090
IRF6614PbF
IRF6614TRPbF
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 