Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7103PBF, MOSFET N channel 3A 50V

HEXFET

Power MOSFET

Top View

Parameter Min. Typ. Max. Units

θJA

Maximum Junction-to-Ambient  



62.5 °C/W

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 3.0

@ T

= 70°C Continuous Drain Current, V

@ 10V 2.3

Pulsed Drain Current  10

= 25°C Power Dissipation 2.0

Linear Derating Factor 0.016 W/°C

Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt  4.5 V/nS

STG

Junction and Storage Temperature Range -55 to + 150

Absolute Maximum Ratings

Thermal Resistance Ratings

°C

SO-8

IRF7103PbF-1

Features Benefits

Industry-standard pinout SO-8 Package

⇒

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

Easier Manufacturing

RoHS Compliant, Halogen-Free Environmentally Friendlier

MSL1, Industrial qualification Increased Reliability

Form Quantity

Tube/Bulk 95 IRF7103PbF-1

Tape and Reel 4000 IRF7103TRPbF-1

Package Type

Standard Pack

Orderable Part Number

IRF7103PbF-1 SO-8

Base Part Number

50 V

DS(on) max

(@V

= 10V)

0.13

DS(on) max

(@V

= 4.5V)

0.20

g (typical)

12 nC

(@T

= 25°C)

3.0 A

Summary of content (9 pages)

PAGE 1
IRF7103PbF-1 HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 50 V 0.13 Ω 0.20 Ω 12 nC 3.
PAGE 2
IRF7103PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ΔV(BR)DSS/ΔTJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Qg Q gs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 50 1.0 Typ. 0.049 0.11 0.16 3.
PAGE 3
IRF7103PbF-1 3 www.irf.
PAGE 4
C, IRF7103PbF-1 4 www.irf.
PAGE 5
IRF7103PbF-1 V DS VGS RD D.U.T. RG + - VDD 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% TA, Ambient Temperature (°C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.1 0.0001 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.
PAGE 6
IRF7103PbF-1 Current Regulator Same Type as D.U.T. QG 10V QGS 50KΩ .2μF 12V .3μF QGD VG D.U.T. + V - DS VGS 3mA Charge IG ID Current Sampling Resistors Fig 12a. Basic Gate Charge Waveform 6 www.irf.com © 2014 International Rectifier Fig 12b.
PAGE 7
IRF7103PbF-1 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + RG • • • • Driver Gate Drive P.W. + dv/dt controlled by R G Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.
PAGE 8
IRF7103PbF-1 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BASIC .025 BAS IC 0.635 BAS IC e1 6X MILLIMETERS MAX A 5 INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.
PAGE 9
IRF7103PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.