Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7304PBF, MOSFET

HEXFET

Power MOSFET

PD - 95038

10/6/04

Generation V Technology

l Ultra Low On-Resistance

l Dual P-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design

that HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple devices can be used in

an application with dramatically reduced board space. The package is designed

for vapor phase, infra red, or wave soldering techniques. Power dissipation of

greater than 0.8W is possible in a typical PCB mount application.

IRF7304PbF

Top View

SO-8

Parameter Max. Units

@ T

= 25°C 10 Sec. Pulsed Drain Current, V

@ -4.5V -4.7

@ T

= 25°C Continuous Drain Current, V

@ -4.5V -4.3

@ T

= 70°C Continuous Drain Current, V

@ -4.5V -3.4 A

Pulsed Drain Current  -17

= 25°C Power Dissipation 2.0

Linear Derating Factor 0.016

Gate-to-Source Voltage ±12 V

dv/dt Peak Diode Recovery dv/dt  -5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

W/°C

DSS

= -20V

DS(on)

= 0.090Ω

Thermal Resistance Ratings

Parameter Typ. Max. Units

θJA

Maximum Junction-to-Ambient  62.5

°C/W

l Lead-Free

Summary of content (9 pages)

PAGE 1
PD - 95038 IRF7304PbF HEXFET® Power MOSFET l l l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V RDS(on) = 0.090Ω Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
PAGE 2
IRF7304PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current Min. Typ. Max. Units Conditions -20 V VGS = 0V, ID = -250µA -0.012 V/°C Reference to 25°C, ID = -1mA 0.090 VGS = -4.5V, ID = -2.2A Ω 0.140 VGS = -2.
PAGE 3
IRF7304PbF 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V 10 1 -1.5V 20µs PULSE WIDTH TJ = 25°C A 0.1 0.01 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP -ID , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP 0.1 1 10 10 1 -1.5V 20µs PULSE WIDTH TJ = 150°C 0.1 0.01 100 0.1 Fig 1. Typical Output Characteristics 2.
PAGE 4
IRF7304PbF 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 1500 Ciss 1000 Coss Crss 500 0 1 10 100 A I D = -2.2A VDS = -16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 12 0 0 -VDS , Drain-to-Source Voltage (V) 10 15 20 A 25 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
PAGE 5
IRF7304PbF V DS V GS 5.0 D.U.T. RG -ID , Drain Current (A) 4.0 RD - + V DD -4.5 V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 3.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 1.0 0.0 25 50 75 100 125 TC , Case Temperature ( °C) 10% VGS 150 td(on) Fig 9. Maximum Drain Current Vs. Ambient Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.
PAGE 6
IRF7304PbF Current Regulator Same Type as D.U.T. 50KΩ QG -4.5 V QGS .2µF 12V .3µF D.U.T. QGD +VDS VGS VG -3mA IG Charge Fig 12a. Basic Gate Charge Waveform ID Current Sampling Resistors Fig 12b.
PAGE 7
IRF7304PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + ** RG • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test VGS* + - * V DD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T.
PAGE 8
IRF7304PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 6X 2 3 0.25 [.010] 4 A e e1 0.25 [.010] MIN .0532 .0688 1.35 1.75 MAX A1 .0040 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BAS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.
PAGE 9
IRF7304PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice.