Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7307, MOSFET N/P-channel 5.2 A/-4.3A 20V

IRF7307

HEXFET

Power MOSFET

PD - 9.1242B

8/25/97

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

N -C HAN NEL M O SF ET

P-CHANNEL MOSFET

Top View

SO-8

Description

N-Ch P-Ch

DSS

20V -20V

DS(on)

0.050Ω 0.090Ω

Max.

N-Channel P-Channel

@ T

= 25°C 10 Sec. Pulse Drain Current, V

@ 4.5V 5.7 -4.7

@ T

= 25°C Continuous Drain Current, V

@ 4.5V 5.2 -4.3

@ T

= 70°C Continuous Drain Current, V

@ 4.5V 4.1 -3.4

Pulsed Drain Current  21 -17

= 25°C Power Dissipation 2.0 W

Linear Derating Factor 0.016 W/°C

Gate-to-Source Voltage ± 12 V

dv/dt Peak Diode Recovery dv/dt  5.0 -5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Parameter Units

Absolute Maximum Ratings

Thermal Resistance Ratings

Parameter Typ. Max. Units

θJA

Maximum Junction-to-Ambient ––– 62.5

°C/W

Summary of content (10 pages)

PAGE 1
PD - 9.1242B IRF7307 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 N -C H AN N EL M O SF ET 1 8 2 7 3 6 4 5 D1 N-Ch P-Ch 20V -20V D1 VDSS D2 D2 P-C H AN N E L M OS FE T RDS(on) 0.050Ω 0.
PAGE 2
IRF7307 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V (BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
PAGE 3
IRF7307 N-Channel 1000 1000 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V B OTTOM 1.5V VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V B OTTOM 1.5V TOP I , Drain- to-S ourc e C urrent ( A) D I , Dr ain-to-Sou rce Cur rent ( A) D TOP 100 10 10 1 .5V 20µ s P U LS E W ID T H T J = 25 °C A 1.5 V 1 0.1 100 1 10 20 µs P U LS E W ID T H T J = 15 0° C A 1 0.1 100 Fig 1. Typical Output Characteristics 2.
PAGE 4
IRF7307 N-Channel 100 OPERATION IN THIS AREA LIMITED BY RDS(on) I D, Drain Current (A) I SD , R e v er s e D ra in C u rre n t (A ) 100 10 TJ = 150° C TJ = 25°C 1 0.0 0.5 1.0 1.5 2.0 10 1ms TA = 25 °C TJ = 150 °C Single Pulse V G S = 0V 0.1 100us 1 0.1 A 1 2.5 100 Fig 8. Maximum Safe Operating Area RD VDS 6.0 VGS 5.0 ID , Drain Current (A) 10 VDS, Drain-to-Source Voltage (V) V SD , Sour ce-to-Dr ain Voltage ( V) Fig 7. Typical Source-Drain Diode Forward Voltage 10ms D.U.T.
PAGE 5
IRF7307 P-Channel 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V B OTTOM - 1.5 V VGS - 7.5V - 5. 0V - 4. 0V - 3. 5V - 3. 0V - 2. 5V - 2. 0V BOTTOM - 1. 5V TOP - ID , Dr ain- to-S ource Current (A) -I D , Drain- to-S ourc e Current (A ) TOP 10 1 -1.5 V 20µ s P U LS E W ID T H TJ = 25 °C 0.1 0.01 0.1 1 10 A 10 1 -1.5V 20µ s PU L SE W ID T H T J = 150° C 0.1 0.01 100 0.1 -V DS , Dra in-to-S ourc e Vo ltage ( V) Fig 12.
PAGE 6
IRF7307 P-Channel 100 100 10 -II D, Drain Current (A) -I SD , R e v e rs e D ra in C u rre n t (A ) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150°C TJ = 25° C 1 VG S = 0 V 0.1 0.3 0.6 0.9 1.2 10 1ms 1 A 10ms TA = 25 °C TJ = 150 °C Single Pulse 1 10 1.5 100 -V DS, Drain-to-Source Voltage (V) - VSD , Sour ce-to-Drain V oltage (V) Fig 18. Typical Source-Drain Diode Forward Voltage Fig 19. Maximum Safe Operating Area RD VDS 5.0 VGS D.U.T. 4.
PAGE 7
IRF7307 N & P-Channel (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 0.02 1 PDM 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 23.
PAGE 8
IRF7307 Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + - - + ** • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T.
PAGE 9
IRF7307 Package Outline SO-8 Outline Dimensions are shown in millimeters (inches) DIM D -B- 5 8 E -A- 1 7 2 6 3 5 H 0.25 (.010) 4 e 6X M A M A -C- 0.10 (.004) A1 B 8X 0.25 (.010) A MIN 1.35 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 e1 θ L 8X 6 C 8X MAX 1.75 .050 BASIC 1.27 BASIC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 K .011 .019 0.28 0.48 L 0.16 .050 0.41 1.
PAGE 10
IRF7307 Tape & Reel Information SO-8 Dimensions are shown in millimeters (inches) 2.0 5 (.08 0) 1.9 5 (.07 7) T ERM INAT IO N N UM BE R 1 1.85 (.072) 4.10 (.161) 1.65 (.065) 3.90 (.154) 1.60 ( .062) 1.50 ( .059) 0.35 ( .013) 0.25 ( .010) 5.55 (.218) 5.45 (.215) 1 F EE D DIR ECT IO N 5.30 (.208) 5.10 (.201) 12.30 (.484) 11.70 (.461) 2.60 (.102) 1.50 (.059) 8.10 ( .318) 7.90 ( .311) 2.20 (.086) 2.00 (.079) 6.50 ( .255) 6.30 ( .248) 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 2 50.