Datasheet

5/8/00
www.irf.com 1
IRF730A
T
O
-22
0
AB
SMPS MOSFET
HEXFET
®
Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
Rds(on) max I
D
400V 1.0 5.5A
SDG
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 5.5
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 3.5 A
I
DM
Pulsed Drain Current 22
P
D
@T
C
= 25°C Power Dissipation 74 W
Linear Derating Factor 0.6 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt 4.6 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
l Effective Coss Specified (See AN1001)
PD - 91902A
Typical SMPS Topologies:
l Single Transistor Flyback Xfmr. Reset
l Single Transistor Forward Xfmr. Reset
(Both US Line input only).

Summary of content (8 pages)