Datasheet

IRF7319
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
P-Channel
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
200
400
600
800
1000
1200
1400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
C
iss
C
oss
C
rss
V
GS
= 0V f = 1 MHz
Ciss = Cgs + Cgd + Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
-
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-4.9A
V =-15V
DS