Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7324PBF, MOSFET

HEXFET

Power MOSFET

6/29/04

IRF7324PbF

Absolute Maximum Ratings

www.irf.com 1

Thermal Resistance

Parameter Max. Units

θJA

Maximum Junction-to-Ambient  62.5 °C/W

Parameter Max. Units

Drain-Source Voltage -20 V

@ T

= 25°C Continuous Drain Current, V

@ -4.5V -9.0

@ T

= 70°C Continuous Drain Current, V

@ -4.5V -7.1 A

Pulsed Drain Current -71

= 25°C Maximum Power Dissipation 2.0 W

= 70°C Maximum Power Dissipation 1.3 W

Linear Derating Factor 16 mW/°C

Gate-to-Source Voltage ± 12 V

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

DSS

= -20V

DS(on)

= 0.018Ω

New trench HEXFET

Power MOSFETs from International

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in battery and load management

applications.

● Trench Technology

● Ultra Low On-Resistance

● Dual P-Channel MOSFET

● Low Profile (<1.1mm)

● Available in Tape & Reel

● 2.5V Rated

● Lead-Free

Description

PD - 95460

Top View

SO-8

Summary of content (8 pages)

PAGE 1
PD - 95460 IRF7324PbF HEXFET® Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Low Profile (<1.1mm) ● Available in Tape & Reel ● 2.5V Rated ● Lead-Free ● ● S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -20V RDS(on) = 0.018Ω Top View Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF7324PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
PAGE 3
IRF7324PbF 1000 1000 VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V 100 100 10 1 0.1 -0.75V 0.01 0.1 1 20µs PULSE WIDTH TJ = 25 ° C 10 10 1 -0.75V 0.1 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 150 ° C TJ = 25 ° C 1 V DS = -15V 20µs PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 1.
PAGE 4
IRF7324PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 4000 Ciss 3000 2000 1000 0 Coss Crss 1 10 10 -VGS , Gate-to-Source Voltage (V) 5000 VDS =-16V 8 6 4 2 0 100 ID = -9.0A 0 10 -VDS , Drain-to-Source Voltage (V) 40 50 60 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 30 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5.
PAGE 5
IRF7324PbF 10.0 RD VDS VGS -ID , Drain Current (A) 8.0 D.U.T. RG - + 6.0 VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 10% 150 TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 0.01 t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2.
PAGE 6
0.025 0.020 ID = -9.0A 0.015 0.010 2.0 2.5 3.0 3.5 4.0 4.5 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage RDS (on) , Drain-to-Source On Resistance (Ω) RDS(on) , Drain-to -Source On Resistance (Ω) IRF7324PbF 0.10 0.08 0.06 0.04 VGS = -2.5V 0.02 VGS = -4.5V 0.00 0 10 20 30 40 50 60 -I D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ QG 12V VGS QGS .3µF QGD D.U.T.
PAGE 7
IRF7324PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 8 6 7 6 MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° A 5 H E 1 6X 2 3 0.25 [.010] 4 A e e1 A 0.25 [.
PAGE 8
IRF7324PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice.