Datasheet

Parameter Max. Units
V
DS
Drain- Source Voltage 20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 4.5V 7.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 4.5V 5.5 A
I
DM
Pulsed Drain Current  28
P
D
@T
A
= 25°C Power Dissipation  2.0
P
D
@T
A
= 70°C Power Dissipation 1.3
Linear Derating Factor 16 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
07/09/08
Absolute Maximum Ratings
W
www.irf.com 1
IRF7331PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max (mW) I
D
20V 30@V
GS
= 4.5V 7.0A
45@V
GS
= 2.5V 5.6A
SO-8
These N-Channel HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 42
R
θJA
Junction-to-Ambient  ––– 62.5 °C/W
Thermal Resistance
PD - 95266A