Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7343, MOSFET N/P-channel 4.7 A/-3.4A 55V

N-Ch P-Ch

DSS

55V -55V

DS(on)

0.050Ω 0.105Ω

HEXFET

Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

2/24/99

SO-8

l Generation V Technology

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Fully Avalanche Rated

IRF7343

Description

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

Max.

N-Channel P-Channel Units

Drain-Source Voltage 55 -55 V

@ T

= 25°C Continuous Drain Current, V

@ 10V 4.7 -3.4

@ T

= 70°C Continuous Drain Current, V

@ 10V 3.8 -2.7

Pulsed Drain Current  38 -27

= 25°C Maximum Power Dissipation  2.0 W

= 70°C Maximum Power Dissipation  1.3 W

Single Pulse Avalanche Energy 72 114 mJ

Avalanche Current 4.7 -3.4 A

Repetitive Avalanche Energy 0.20 mJ

Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt  5.0 -5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Parameter

Absolute Maximum Ratings

Parameter Typ. Max. Units

θJA

Maximum Junction-to-Ambient  ––– 62.5 °C/W

Thermal Resistance

www.irf.com 1

PD -91709

Summary of content (10 pages)

PAGE 1
PD -91709 IRF7343 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated S1 N - C H A N N EL M O S FE T 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P -C H A N N E L M O S F E T Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF7343 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient Min. 55 -55 — — — — — — 1.0 -1.0 7.9 3.3 — — — — –– — — — — — — — — — — — — — — — — — — — — Typ. Max. — — — — 0.059 — 0.054 — 0.043 0.050 0.056 0.065 0.095 0.105 0.150 0.170 — — — — — — — — — 2.0 — -2.0 — 25 — -25 — ±100 24 36 26 38 2.3 3.4 3.0 4.5 7.0 10 8.4 13 8.3 12 14 22 3.2 4.
PAGE 3
IRF7343 N-Channel 100 100 VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V BOTTOM 3.0V VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 10 3.0V 10 3.0V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2.
PAGE 4
IRF7343 ID = 4.7A (Ω) 0.0 -60 -40 -20 R DS (on), Drain-to-Source On Resistance RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 N-Channel 2.0 1.5 1.0 0.5 VGS = 10V 0 20 40 60 80 100 120 140 160 0.120 0.100 0.080 VGS = 4.5V 0.060 VGS = 10V 0.040 0 10 TJ , Junction Temperature ( °C) 200 0.10 0.08 I D = 4.7A 0.06 0.04 A 0 2 4 6 8 V G S , Gate-to-Source V oltage (V ) Fig 7. Typical On-Resistance Vs. Gate Voltage 10 EAS , Single Pulse Avalanche Energy (mJ) 0.
PAGE 5
IRF7343 N-Channel 1200 VGS , Gate-to-Source Voltage (V) 1000 C, Capacitance (pF) 20 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd Ciss 800 600 400 Coss 200 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 0 1 10 0 100 10 20 30 40 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.
PAGE 6
IRF7343 100 P-Channel 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 -3.0V 1 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 -3.0V 1 20µs PULSE WIDTH TJ = 150 °C 0.1 0.1 100 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 100 100 -ISD , Reverse Drain Current (A) Fig 13. Typical Output Characteristics -I D , Drain-to-Source Current (A) Fig 12.
PAGE 7
IRF7343 P-Channel ID = -3.4 A R DS (on), Drain-to-Source On Resistance (Ω) R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.240 0.200 VGS = -4.5V 0.160 0.120 VGS = -10V 0.080 0 2 TJ , Junction Temperature ( °C) 6 8 0.45 EAS , Single Pulse Avalanche Energy (mJ) 300 0.35 0.25 I D = -3.4 A 0.15 0.05 A 2 5 8 11 -V G S , G ate-to-S ource V oltage (V) Fig 18. Typical On-Resistance Vs.
PAGE 8
IRF7343 1200 20 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 960 C, Capacitance (pF) P-Channel Ciss 720 480 Coss 240 Crss 0 1 10 ID = -3.1A VDS = -48V VDS = -30V VDS = -12V 16 12 8 4 0 100 0 --VDS , Drain-to-Source Voltage (V) 10 20 30 40 QG , Total Gate Charge (nC) Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 20. Typical Capacitance Vs.
PAGE 9
IRF7343 Package Outline SO8 Outline DIM D -B- 5 8 7 6 5 1 2 3 e 6X 0.25 (.010) 4 M A M K x 45° e1 θ A -C- 0.10 (.004) B 8X 0.25 (.010) L 8X A1 6 C 8X M C A S B S MILLIMETERS MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 B .014 .018 0.36 0.46 C .0075 .0098 0.19 0.25 D .189 .196 4.80 4.98 E .150 .157 3.81 3.99 5 H E -A- INCHES MIN e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 BASIC H .2284 .2440 K .011 .019 0.28 5.80 0.
PAGE 10
IRF7343 Tape & Reel Information SO8 Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 .