Datasheet

www.irf.com 1
11/18/09
IRF7351PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 10
SO-8
PD - 97436
Benefits
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
Applications
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
l Low Power Motor Drive Systems
V
DSS
R
DS(on)
max
Qg (typ.)
60V
17.8m
Ω
@V
GS
= 10V
24nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain
C
urrent
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead
––– 20 °C/W
R
θ
JA
Junction-to-Ambient
––– 62.5
-55 to + 150
2.0
0.016
1.28
Max.
8.0
6.4
64
± 20
60
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7