Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7402, MOSFET N channel 6.8A 20V

HEXFET

Power MOSFET

2/22/00

IRF7402

Description

Parameter Max. Units

θJA

Maximum Junction-to-Ambient  50 °C/W

Thermal Resistance

l Generation V Technology

l Ultra Low On-Resistance

l N-Channel MOSFET

l Very Small SOIC Package

l Low Profile (<1.1mm)

l Available in Tape & Reel

l Fast Switching

Top View

DSS

= 20V

DS(on)

= 0.035Ω

Fifth Generation HEXFET

power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characterstics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared or wave soldering techniques.

Power dissipation of greater than 0.8 W is possible in a

typical PCB mount application.

www.irf.com 1

SO-8

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 4.5V 6.8

@ T

= 70°C Continuous Drain Current, V

@ 4.5V 5.4 A

Pulsed Drain Current  54

= 25°C Power Dissipation 2.5 W

= 70°C Power Dissipation 1.6

Linear Derating Factor 0.02 W/°C

Gate-to-Source Voltage ± 12 V

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

STG

Junction and Storage Temperature Range -55 to + 150 °C

Absolute Maximum Ratings

PD - 93851A

Summary of content (8 pages)

PAGE 1
PD - 93851A IRF7402 HEXFET® Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 20V RDS(on) = 0.035Ω T o p V ie w Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
PAGE 2
IRF7402 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
PAGE 3
IRF7402 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOT TOM 1.5V TO P I , D rain-to-S ou rc e C urre nt (A ) D I , D rain-to-S ou rc e C urre nt (A ) D TO P 10 1 20 µ s P U LS E W ID TH TJ = 2 5°C A 1.5V 0.1 0.1 1 10 1 .5V 1 20 µ s P U LS E W ID TH TJ = 1 50 °C A 0.1 10 0.1 1 V D S , D rain-to-S ourc e V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.
PAGE 4
IRF7402 10 V GS C iss C rs s C o ss C , Capacitance (pF) 1000 = = = = 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d V G S, G ate-to-S ource V oltage (V ) 1200 C iss 800 C oss 600 400 C rss 200 0 10 8 6 4 2 FO R TE S T CIR C U IT S E E FIG U R E 9 0 A 1 I D = 3 .8A V D S = 16 V 0 100 12 16 20 A 24 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs.
PAGE 5
IRF7402 8.0 RD V DS I D , Drain Current (A) VGS 6.0 D.U.T. RG + - V DD 4.5V 4.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 TC , Case Temperature 125 150 ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 1 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2.
PAGE 6
IRF7402 Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF 4.5V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 12b. Gate Charge Test Circuit 0.3 RDS(on) , Drain-to-Source On Resistance ( Ω ) RDS(on) , Drain-to-Source On Resistance ( Ω ) Fig 12a. Basic Gate Charge Waveform VGS = 2.5V 0.2 0.1 VGS =5V 0.0 A 0 3 6 9 12 15 0.05 0.04 D ID D , Drain Current (A) Fig 13. Typical On-Resistance Vs. Drain Current 6 = 5.7A 0.03 0.
PAGE 7
IRF7402 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0.2 5 (.0 10 ) 4 M A M θ e1 K x 45 ° -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
PAGE 8
IRF7402 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.