Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsFETsIRF7421D1, MOSFET N channel 5/8A 30V

www.irf.com 1

Parameter Maximum Units

@ T

= 25°C Continuous Drain Current, V

@10V➃ 5.8 A

@ T

= 70°C 4.6

Pulsed Drain Current ➀ 46

= 25°C Power Dissipation ➃ 2.0 W

= 70°C 1.3

Linear Derating Factor 16 W/°C

Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt ➁ -5.0 V/ns

STG

Junction and Storage Temperature Range -55 to +150 °C

IRF7421D1

PRELIMINARY

FETKY





MOSFET / Schottky Diode

Notes:

➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)

➁ I

≤ 4.1A, di/dt ≤ 110A/µs, V

≤ V

(BR)DSS

, T

≤ 150°C

➂ Pulse width ≤ 300µs; duty cycle ≤ 2%

➃ Surface mounted on FR-4 board, t ≤ 10sec.

Parameter Maximum Units

θJA

Junction-to-Ambient ➃ 62.5 °C/W

Absolute Maximum Ratings (T

= 25°C unless otherwise noted)

Thermal Resistance Ratings

8/20/98

The FETKY family of co-packaged HEXFETs and Schottky diodes offer

the designer an innovative board space saving solution for switching

regulator applications. Generation 5 HEXFETs utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area. Combining

this technology with International Rectifier's low forward drop Schottky

rectifiers results in an extremely efficient device suitable for use in a wide

variety of portable electronics applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics. The SO-8 package is designed for vapor phase,

infrared or wave soldering techniques.

Description

l Co-packaged HEXFET

Power

MOSFET and Schottky Diode

l Ideal For Synchronous Regulator

Applications

l Generation V Technology

l SO-8 Footprint

DSS

= 30V

DS(on)

= 0.035Ω

Schottky Vf = 0.39V

Top View

SO-8

PD- 91411C

7421d1.p65 8/20/98, 4:07 PM1

Summary of content (8 pages)

PAGE 1
PD- 91411C IRF7421D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Synchronous Regulator Applications Generation V Technology SO-8 Footprint l l l l A A D A 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = 30V RDS(on) = 0.035Ω Schottky Vf = 0.39V T o p V ie w Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications.
PAGE 2
IRF7421D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS RDS(on) Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output C
PAGE 3
2 IRF7421D1 Power Mosfet Characteristics 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOT TOM 3.0V TOP I D, D rain-to-S ource C urrent (A ) I D , D rain-to-S ource C urrent (A ) TOP 10 3 .0V 1 0.1 20µ s P U LS E W ID TH TJ = 25°C A 1 10 3.0V 2 0µ s P U LS E W ID TH TJ = 1 50°C A 1 10 0.
PAGE 4
IRF7421D1 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) 2.0 I D = 4.1A 1.5 1.0 0.5 V G S = 10V 0.0 -60 -40 -20 0 20 40 60 80 100 120 A RDS (on) , Drain-to-Source On Resistance (Ω) Power Mosfet Characteristics 0.2 VGS = 4.5V 0.1 VGS =10V 0.0 140 160 A 0 5 T J , Junction T em perature (°C ) I Fig 5. Normalized On-Resistance Vs.
PAGE 5
IRF7421D1 Power Mosfet Characteristics V GS C iss C rss C oss C , C apacitanc e (pF ) 800 = = = = 20 0V , f = 1M H z C gs + C gd , C ds S H O R TE D C gd C ds + C gd V G S , G ate-to-S ource V oltage (V ) 1000 C is s 600 C os s 400 C rs s 200 0 10 V D S = 24V V D S = 15V 16 12 8 4 FO R TE S T C IR C U IT S E E FIG U R E 9 0 A 1 I D = 4.1A 0 100 5 V D S , D rain-to -S ource V oltage (V ) 10 15 20 25 Q G , Total G ate C harge (nC ) Fig 9. Typical Capacitance Vs.
PAGE 6
IRF7421D1 Schottky Diode Characteristics 100 Reverse Current - IR (mA) In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 10 TJ = 150°C 10 125°C 1 100°C 75°C 0.1 50°C 0.01 25°C 0.001 A 0.0001 0 5 10 15 20 25 30 1 Reverse Voltage - V R (V) T J = 1 5 0 °C T J = 1 2 5 °C Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage T J = 2 5 °C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 F o rw a rd V o lta g e D ro p - V F M (V ) Fig.
PAGE 7
IRF7421D1 SO-8 Package Details D IM D -B- 5 8 7 5 θ 6 A 5 H E -A- 1 2 3 e 6X 0.25 (.010) 4 M A M θ e1 -C- 0.10 (.004) A1 B 8X 0.25 (.010) L 8X 6 C 8X M C A S B S M IN M AX .05 32 .06 88 1 .3 5 1 .75 .00 40 .00 98 0 .1 0 0 .25 B .01 4 .01 8 0 .3 6 0 .46 C .0 0 75 .0 09 8 0 .19 0.25 D .1 8 9 .1 96 4 .80 4.98 E .15 0 .15 7 3 .8 1 3 .99 e1 A M IL LIM E T E R S MAX A1 e K x 45° IN C H E S M IN .05 0 B A S IC 1.2 7 B A S IC .02 5 B A S IC 0 .
PAGE 8
IRF7421D1 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2.