Datasheet
HEXFET
®
Power MOSFET
Top View
8
1
2
3
4
5
6
7
D
D
DG
S
A
D
S
S
SO-8
IRF7425PbF
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 50 °C/W
Thermal Resistance
Parameter Max. Units
V
DS
Drain- Source Voltage -20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -4.5V -15
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -4.5V -12 A
I
DM
Pulsed Drain Current -60
P
D
@T
A
= 25°C Power Dissipation 2.5
P
D
@T
A
= 70°C Power Dissipation 1.6
Linear Derating Factor 20 mW/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
V
DS
-20 V
R
DS(on) max
(@V
GS
= -4.5V)
8.2
R
DS(on) max
(@V
GS
= -2.5V)
13
Q
g (typical)
87 nC
I
D
(@T
A
= 25°C)
-15 A
m
Ω
Features Benefits
Industry-standard pinout SO-8 Package
⇒
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1,Consumer qualification Increased Reliability
Form Quantity
Tube/Bulk 95 IRF7425PbF
Tape and Reel 4000 IRF7425TRPbF
Package Type
Standard Pack
Orderable Part Number
IRF7425PbF SO-8
Base Part Number
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