Datasheet

IRF7459
SMPS MOSFET
Notes  through  are on page 8
Absolute Maximum Ratings
Symbol Parameter Max. Units
V
DS
Drain-Source Voltage 20 V
V
GS
Gate-to-Source Voltage ± 12 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 12
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 10 A
I
DM
Pulsed Drain Current 100
P
D
@T
A
= 25°C Maximum Power Dissipation 2.5 W
P
D
@T
A
= 70°C Maximum Power Dissipation 1.6 W
Linear Derating Factor 0.02 W/°C
T
J
, T
STG
Junction and Storage Temperature Range -55 to + 150 °C
HEXFET
®
Power MOSFET
Benefits
V
DSS
R
DS(on)
max I
D
20V 9.0mΩ 12A
www.irf.com 1
3/25/01
l Ultra-Low Gate Impedance
l Very Low R
DS(on)
at 4.5V V
GS
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient  ––– 50 °C/W
Thermal Resistance
PD- 93885B
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
Applications
l High Frequency Buck Converters for
Computer Processor Power