Datasheet
www.irf.com 1
09/21/04
IRF7478PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Parameter Max. Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V 7.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V 5.6 A
I
DM
Pulsed Drain Current 56
P
D
@T
A
= 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 3.7 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes through are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
V
DSS
R
DS(on)
max (mW) I
D
60V 26@V
GS
= 10V 4.2A
30@V
GS
= 4.5V 3.5A
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
Symbol Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead ––– 20
R
θJA
Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD- 95280