Datasheet

www.irf.com 1
09/21/04
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
IRF7493PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
PD - 95289
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max
Qg (typ
.)
80V
15m @V
GS
=10V
35nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
C
= 70°C
Maximum Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Lead ––– 20
R
θ
JA
Junction-to-Ambient
––– 50
Max.
9.3
7.4
74
± 20
80
-55 to + 150
2.5
0.02
1.6