Datasheet

www.irf.com 1
9/21/04
IRF7495PbF
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
l Lead-Free
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Notes through are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
PD - 95288
V
DSS
R
DS(on)
max
I
D
100V
22m
@V
GS
= 10V
7.3A
Absolute Maximum Ratings
Parameter
Units
DS
Drain-to-Source Voltage V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 100°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor W/°C
dv/dt Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θ
JL
Junction-to-Drain Lead ––– 20 °C/W
R
θ
JA
Junction-to-Ambient (PCB Mount)
––– 50
7.3
-55 to + 150
0.02
2.5
Max.
7.3
4.6
58
100
± 20

Summary of content (8 pages)