Datasheet

9/2/04
HEXFET
®
Power MOSFET
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 70 °C/W
Thermal Resistance
V
DSS
= 20V
R
DS(on)
= 0.030Ω
Description
www.irf.com 1
IRF7607PbF
l Trench Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Lead-Free
New trench HEXFET
®
power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8™ package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Parameter Max. Units
V
DS
Drain- Source Voltage 20 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 4.5V 6.5
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 4.5V 5.2 A
I
DM
Pulsed Drain Current  50
P
D
@T
A
= 25°C Power Dissipation 1.8
P
D
@T
A
= 70°C Power Dissipation 1.2
Linear Derating Factor 0.014 W/°C
V
GS
Gate-to-Source Voltage ± 12 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
Micro8™
PD - 95698