IRF7820PbF HEXFET® Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 10V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating VDSS RDS(on) max Qg (typ.) 200V 78m @VGS = 10V 29nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Absolute Maximum Ratings Parameter Max.
IRF7820PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS VDSS / TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Q gs1 Q gs2 Q gs Q gd Q godr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
IRF7820PbF 1000 100 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 7.0V 6.25V 6.0V 5.75V 5.5V 5.25V 1 5.25V 0.1 10 BOTTOM VGS 15V 10V 7.0V 6.25V 6.0V 5.75V 5.5V 5.25V 5.25V 1 60μs PULSE WIDTH 60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.01 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.
IRF7820PbF 100000 VGS, Gate-to-Source Voltage (V) ID= 2.2A C oss = C ds + C gd 10000 C, Capacitance (pF) 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Ciss 1000 Coss Crss 100 10 12.0 VDS= 160V VDS= 100V 10.0 VDS= 40V 8.0 6.0 4.0 2.0 0.0 1 10 100 1000 0 VDS, Drain-to-Source Voltage (V) 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 30 40 Fig 6. Typical Gate Charge vs.
IRF7820PbF 4 VGS(th) , Gate threshold Voltage (V) 6.0 ID, Drain Current (A) 3 2 1 5.5 5.0 4.5 ID = 100μA ID = 250μA 4.0 ID = 1.0mA ID = 1.0A 3.5 3.0 2.5 0 25 50 75 100 125 -75 -50 -25 150 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Ambient Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 0.20 0.10 0.05 0.02 0.01 10 1 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.
150 2500 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRF7820PbF ID = 3.6A ID 0.25A 0.37A BOTTOM 2.8A TOP 2000 125 T J = 125°C 1500 100 1000 75 T J = 25°C 50 500 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V D.U.
IRF7820PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) S Qgodr Fig 16b. Gate Charge Waveform Fig 16a. Gate Charge Test Circuit Driver Gate Drive D.U.T P.W. + + - * RG D.U.T. ISD Waveform Reverse Recovery Current VDD ** P.W. Period *** + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T.
IRF7820PbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ',0 % $ + > @ ( $ 0,1 $ E F ' ( H %$6,& H ; H H ; E > @ $ $ 0,//,0(7(56 0$; $ ,1&+(6 0,1 0$; %$6,& %$6,& %$6,& + .
IRF7820PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.