Datasheet

09/21/04
www.irf.com 1
IRF7842PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
PD - 95269
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
l Lead-Free
V
DSS
R
DS(on)
max
Qg (typ
.)
40V
5.0m
@V
GS
= 10V
33nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead
––– 20 °C/W
R
θ
JA
Junction-to-Ambient
––– 50
-55 to + 150
2.5
0.02
1.6
Max.
18
14
140
± 20
40