Datasheet

www.irf.com 1
06/04/09
IRF7862PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
l 100% tested for Rg
l Lead-Free
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
V
DSS
R
DS(on)
max
Qg
30V
3.3m @V
GS
= 10V
30nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead
––– 20
R
θJA
Junction-to-Ambient
––– 50
°C/W
V
A
W
°C
-55 to + 150
2.5
0.02
1.6
Max.
21
17
170
± 20
30
PD - 97275B