Datasheet
www.irf.com 1
07/09/08
IRF7907PbF
HEXFET
®
Power MOSFET
SO-8
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
l Improved Body Diode Reverse Recovery
l 100% Tested for R
G
l Lead-Free
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
V
DSS
I
D
30V Q1 16.4m @V
GS
= 10V 9.1A
Q2 11.8m
@V
GS
= 10V 11A
R
DS(on)
max
Absolute Maximum Ratings
Parameter Q1 Max. Q2 Max. Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
9.1 11
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
7.3 8.8 A
I
DM
Pulsed Drain Current
76 85
P
D
@T
A
= 25°C
Power Dissipation 2.0 2.0 W
P
D
@T
A
= 70°C
Power Dissipation 1.3 1.3
Linear Derating Factor 0.016 0.016 W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Q1 Max. Q2 Max. Units
R
θJL
Junction-to-Drain Lead
42 42 °C/W
R
θJA
Junction-to-Ambient
62.5 62.5
± 20
30
-55 to + 150
PD - 97066A