Datasheet

Notes  through  are on page 8
www.irf.com 1
07/06/04
IRF8010PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
100V 15mΩ 80A

PD - 95505
TO-220AB
Applications
l High frequency DC-DC converters
l UPS and Motor Control
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical R
DS(on)
= 12mΩ
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt
Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw N•m (lbf•in)
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.57
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
-55 to + 175
300 (1.6mm from case )
1.1(10)
Max.
80
57
320
260
1.8
± 20
16