Datasheet

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5/8/00
IRF820A
SMPS MOSFET
HEXFET
®
Power MOSFET
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High speed power switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective C
OSS
specified (See AN 1001)
V
DSS
R
DS
(on) max I
D
500V 3.0Ω 2.5A
Typical SMPS Topologies:
l Two transistor Forward
l Half Bridge and Full Bridge
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 2.5
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 1.6 A
I
DM
Pulsed Drain Current  10
P
D
@T
C
= 25°C Power Dissipation 50 W
Linear Derating Factor 0.4 W/°C
V
GS
Gate-to-Source Voltage ± 30 V
dv/dt Peak Diode Recovery dv/dt  3.4 V/ns
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
SDG
PD- 93773A
Notes  through  are on page 8
TO-220AB