Datasheet

www.irf.com 1
10/24/07
IRF8707PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
Benefits
l Very Low Gate Charge
l Very Low R
DS(on)
at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
l 100% tested for Rg
l Lead-Free
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook
Processor Power
l Control MOSFET for Isolated
DC-DC Converters in Networking
Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
V
DSS
R
DS(on)
max
Qg
30V
11.9m @V
GS
= 10V
6.2nC
Description
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead
––– 20
R
θJA
Junction-to-Ambient
––– 50
°C/W
V
A
W
°C
Max.
11
9.1
88
± 20
30
-55 to + 150
2.5
0.02
1.6
PD - 96118A