Datasheet

www.irf.com 1
07/30/07
IRF8721PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
Benefits
l Very Low Gate Charge
l Low R
DS(on)
at 4.5V V
GS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V V
GS
Max. Gate Rating
l Lead-Free
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
PD - 97119
Description
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead
––– 20 °C/W
R
θ
JA
Junction-to-Ambient
––– 50
-55 to + 150
2.5
0.02
1.6
Max.
14
11
110
± 20
30
V
DSS
R
DS(on)
max
Qg
30V
8.5m
:
@V
GS
= 10V
8.3nC