Datasheet

www.irf.com 1
08/1/07
IRF8736PbF
HEXFET
®
Power MOSFET
Notes  through  are on page 9
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for R
G
l Lead -Free
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
PD - 97120
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJL
Junction-to-Drain Lead
––– 20 °C/W
R
θJA
Junction-to-Ambient
––– 50
Max.
18
14.4
144
± 20
30
-55 to + 150
2.5
0.02
1.6
V
DSS
R
DS(on)
max
Qg Typ.
30V
4.8m
@V
GS
= 10V
17nC